Si4688DY Datasheet PDF - Vishay
| Part Number | Si4688DY | |
| Description | N-Channel 30-V (D-S) MOSFET | |
| Manufacturers | Vishay | |
| Logo | ||
There is a preview and Si4688DY download ( pdf file ) link at the bottom of this page. Total ( 6 pages ) | ||
Wuxi NCE Power Semiconductor Co., LtdPagev1.02NCE4688Pb Free ProductCharacteristicThermal Resistance,Junction-to-Ambient (Note2) datasheet search, datasheets. N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel VDS = 60V,ID =6.3A RDS(ON). Si4684DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V Extremely Low Qgd WFET Technology1630 14 nCfor Low Switching Losses0.0115 at VGS = 4.5 V 14 TrenchFET Power MOSFET 100% Rg Tested Compliant to RoHS Direc.
Preview 1 page No Preview Available ! N-Channel 30-V (D-S) MOSFET Vishay Siliconix VDS (V) 30 0.011 at VGS = 10 V ID (A) 9.8 S2 G4 8D 6D Top View Ordering Information: Si4688DY-T1-E3 (Lead (Pb)-free) FEATURES Available • 100 % Rg Tested APPLICATIONS - Core D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Steady State VDS 30 VGS Continuous Drain Current (TJ = 150 °C)a TA = 70 °C 12 8.9 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 mH EAS 20 TA = 25 °C PD 1.6 0.9 TJ, Tstg Unit A W THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Notes: t ≤ 10 s Steady State RthJA Document Number: 69996 Typical 73 Maximum 90 Unit www.vishay.com |
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix 1 0.2 0.1 0.02 10- 4 10- 3 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and Document Number: 69996 www.vishay.com Preview 5 Page |
4688 Mosfet Data
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ Si4688DY.PDF Datasheet ] | |
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Featured Datasheets
Si 4688 Mosfet
| Part Number | Description | Manufacturers |
| Si4688DY | The function is N-Channel 30-V (D-S) MOSFET. | Vishay |
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